? semiconductor components industries, llc, 2002 june, 2002 rev. 2 1 publication order number: 1n6373/d 1n6373 - 1n6381 series (icte-5 - icte-36, mpte-5 - mpte-45) 1500 watt peak power mosorb ? zener transient voltage suppressors unidirectional* mosorb devices are designed to protect voltage sensitive components from high voltage, highenergy transients. they have excellent clamping capability, high surge capability, low zener impedance and fast response time. these devices are on semiconductor's exclusive, cost-effective, highly reliable surmetic ? axial leaded package and are ideally-suited for use in communication systems, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications, to protect cmos, mos and bipolar integrated circuits. specification features: ? working peak reverse voltage range 5 v to 45 v ? peak power 1500 watts @ 1 ms ? esd rating of class 3 (>16 kv) per human body model ? maximum clamp voltage @ peak pulse current ? low leakage < 5 a above 10 v ? response time is typically < 1 ns mechanical characteristics: case: void-free, transfer-molded, thermosetting plastic finish: all external surfaces are corrosion resistant and leads are readily solderable maximum lead temperature for soldering purposes: 230 c, 1/16 from the case for 10 seconds polarity: cathode indicated by polarity band mounting position: any maximum ratings rating symbol value unit peak power dissipation (note 1.) @ t l 25 c p pk 1500 watts steady state power dissipation @ t l 75 c, lead length = 3/8 derated above t l = 75 c p d 5.0 20 watts mw/ c thermal resistance, junctiontolead r jl 20 c/w forward surge current (note 2.) @ t a = 25 c i fsm 200 amps operating and storage temperature range t j , t stg 65 to +175 c *please see 1n6382 1n6389 (icte10c icte36c, mpte8c mpte45c) for bidirectional devices axial lead case 41a plastic l = assembly location mptexx = on device code ictexx = on device code 1n63xx = jedec device code yy = year ww = work week cathode anode device package shipping ordering information mptexx axial lead 500 units/box mptexxrl4 axial lead 1500/tape & reel ictexx axial lead 500 units/box ictexxrl4 axial lead 1500/tape & reel notes: l icte xx yyww 1n63xx axial lead 500 units/box 1n63xxrl4* axial lead 1500/tape & reel l mpte xx 1n 63xx yyww 1. nonrepetitive current pulse per figure 5 and der- ated above t a = 25 c per figure 2. 2. 1/2 sine wave (or equivalent square wave), pw = 8.3 ms, duty cycle = 4 pulses per minute maxi- mum. http://onsemi.com *1n6378 not available in 1500/tape & reel .com .com .com 4 .com u datasheet
unidirectional tvs i pp i f v i i r i t v rwm v c v br v f 1n6373 1n6381 series (icte5 icte36, mpte5 mpte45) http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted, v f = 3.5 v max. @ i f (note 3.) = 100 a) symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm v br breakdown voltage @ i t i t test current v br maximum temperature variation of v br i f forward current v f forward voltage @ i f electrical characteristics (t a = 25 c unless otherwise noted, v f = 3.5 v max. @ i f (note 3.) = 100 a) v rwm i r @ breakdown voltage v c @ i pp (note 6.) v c (volts) (note 6.) jedec device device v rwm (note 4.) i r @ v rwm v br (note 5. ) (volts) @ i t v c i pp @i pp = @i pp = v br d ev i ce (on device) d ev i ce marking (volts) ( a) min nom max (ma) (volts) (a) @ i pp = 1 a @ i pp = 10 a (mv/ c) 1n6373 (mpte5) 1n6373 mpte5 5.0 300 6.0 1.0 9.4 160 7.1 7.5 4.0 1n6374 (mpte8) 1n6374 mpte8 8.0 25 9.4 1.0 15 100 11.3 11.5 8.0 1n6375 (mpte10) 1n6375 mpte10 10 2.0 11.7 1.0 16.7 90 13.7 14.1 12 1n6376 (mpte12) 1n6376 mpte12 12 2.0 14.1 1.0 21.2 70 16.1 16.5 14 1n6377 (mpte15) 1n6377 mpte15 15 2.0 17.6 1.0 25 60 20.1 20.6 18 1n6378* (mpte18) 1n6378* mpte18 18 2.0 21.2 1.0 30 50 24.2 25.2 21 1n6379 (mpte22) 1n6379 mpte22 22 2.0 25.9 1.0 37.5 40 29.8 32 26 1n6380 (mpte36) 1n6380 mpte36 36 2.0 42.4 1.0 65.2 23 50.6 54.3 50 1n6381 (mpte45) 1n6381 mpte45 45 2.0 52.9 1.0 78.9 19 63.3 70 60 icte5 icte5 5.0 300 6.0 1.0 9.4 160 7.1 7.5 4.0 icte10 icte10 10 2.0 11.7 1.0 16.7 90 13.7 14.1 8.0 icte12 icte12 12 2.0 14.1 1.0 21.2 70 16.1 16.5 12 icte15 icte15 15 2.0 17.6 1.0 25 60 20.1 20.6 14 icte18 icte18 18 2.0 21.2 1.0 30 50 24.2 25.2 18 icte22 icte22 22 2.0 25.9 1.0 37.5 40 29.8 32 21 icte36 icte36 36 2.0 42.4 1.0 65.2 23 50.6 54.3 26 notes: 3. square waveform, pw = 8.3 ms, nonrepetitive duty cycle. 4. a transient suppressor is normally selected according to the maximum working peak reverse voltage (v rwm ), which should be equal to or greater than the dc or continuous peak operating voltage level. 5. v br measured at pulse test current i t at an ambient temperature of 25 c and minimum voltage in v br is to be controlled. 6. surge current waveform per figure 5 and derate per figures 1 and 2. *not available in the 1500/tape & reel .com .com .com .com 4 .com u datasheet
1n6373 1n6381 series (icte5 icte36, mpte5 mpte45) http://onsemi.com 3 figure 1. pulse rating curve 100 80 60 40 20 0 0 25 50 75 100 125 150 175 200 peak pulse derating in % of peak power or current @ t a = 25 c t a , ambient temperature ( c) figure 2. pulse derating curve 5 4 3 2 1 25 50 75 100 125 150 175 200 p d , steady state power dissipation (watts) t l , lead temperature ( c) 3/8 3/8 0 0 100 50 0 01 2 3 4 t, time (ms) , value (%) t r 10 s t p peak value - i pp half value - i pp 2 pulse width (t p ) is defined as that point where the peak current decays to 50% of i pp . 1 s 10 s 100 s 1 ms 10 ms 100 10 1 t p , pulse width p pk , peak power (kw) nonrepetitive pulse waveform shown in figure 5 0.1 s i pp figure 3. capacitance versus breakdown voltage figure 4. steady state power derating figure 5. pulse waveform 1n6373, icte-5, mpte-5, through 1n6389, icte-45, c, mpte-45, c v br , breakdown voltage (volts) 1 10 100 1000 10,000 1000 100 10 c, capacitance (pf) measured @ zero bias measured @ v rwm .com .com .com .com 4 .com u datasheet
1n6373 1n6381 series (icte5 icte36, mpte5 mpte45) http://onsemi.com 4 1n6373, icte-5, mpte-5, through 1n6389, icte-45, c, mpte-45, c 1.5ke6.8ca through 1.5ke200ca figure 6. dynamic impedance 1000 500 200 100 50 20 10 5 2 1 1000 500 200 100 50 20 10 5 2 1 0.3 0.5 0.7 1 2 3 5 7 10 20 30 v br , instantaneous increase in v br above v br(nom) (volts) 0.3 0.5 0.7 1 2 3 5 7 10 20 30 v br , instantaneous increase in v br above v br(nom) (volts) i t , test current (amps) v br(min) =6.0 to 11.7v t l =25 c t p =10 s v br(nom) =6.8 to 13v 20v 24v 43v 75v 180v 120v 19v 21.2v 42.4v figure 7. typical derating factor for duty cycle derating factor 1 ms 10 s 1 0.7 0.5 0.3 0.05 0.1 0.2 0.01 0.02 0.03 0.07 100 s 0.1 0.2 0.5 2 5 10 50 1 20 100 d, duty cycle (%) pulse width 10 ms t l =25 c t p =10 s i t , test current (amps) .com .com .com .com 4 .com u datasheet
1n6373 1n6381 series (icte5 icte36, mpte5 mpte45) http://onsemi.com 5 application notes response time in most applications, the transient suppressor device is placed in parallel with the equipment or component to be protected. in this situation, there is a time delay associated with the capacitance of the device and an overshoot condition associated with the inductance of the device and the inductance of the connection method. the capacitance effect is of minor importance in the parallel protection scheme because it only produces a time delay in the transition from the operating voltage to the clamp voltage as shown in figure 8. the inductive effects in the device are due to actual turn-on time (time required for the device to go from zero current to full current) and lead inductance. this inductive effect produces an overshoot in the voltage across the equipment or component being protected as shown in figure 9. minimizing this overshoot is very important in the application, since the main purpose for adding a transient suppressor is to clamp voltage spikes. these devices have excellent response time, typically in the picosecond range and negligible inductance. however, external inductive effects could produce unacceptable overshoot. proper circuit layout, minimum lead lengths and placing the suppressor device as close as possible to the equipment or components to be protected will minimize this overshoot. some input impedance represented by z in is essential to prevent overstress of the protection device. this impedance should be as high as possible, without restricting the circuit operation. duty cycle derating the data of figure 1 applies for non-repetitive conditions and at a lead temperature of 25 c. if the duty cycle increases, the peak power must be reduced as indicated by the curves of figure 7. average power must be derated as the lead or ambient temperature rises above 25 c. the average power derating curve normally given on data sheets may be normalized and used for this purpose. at first glance the derating curves of figure 7 appear to be in error as the 10 ms pulse has a higher derating factor than the 10 s pulse. however, when the derating factor for a given pulse of figure 7 is multiplied by the peak power value of figure 1 for the same pulse, the results follow the expected trend. typical protection circuit v in v l v v in v in (transient) v l t d v v l v in (transient) z in load overshoot due to inductive effects t d = time delay due to capacitive effect t t figure 8. figure 9. .com .com .com .com 4 .com u datasheet
1n6373 1n6381 series (icte5 icte36, mpte5 mpte45) http://onsemi.com 6 outline dimensions 1500 watt mosorb transient voltage suppressors axial leaded mosorb case 41a04 issue d dim a min max min max millimeters 0.335 0.374 8.50 9.50 inches b 0.189 0.209 4.80 5.30 d 0.038 0.042 0.96 1.06 k 1.000 --- 25.40 --- p --- 0.050 --- 1.27 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. lead finish and diameter uncontrolled in dimension p. 4. 041a-01 thru 041a-03 obsolete, new standard 041a-04. d k p p a k b .com .com .com .com 4 .com u datasheet
1n6373 1n6381 series (icte5 icte36, mpte5 mpte45) http://onsemi.com 7 notes .com .com .com .com 4 .com u datasheet
1n6373 1n6381 series (icte5 icte36, mpte5 mpte45) http://onsemi.com 8 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and re asonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employ er. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. 1n6373/d mosorb and surmetic are trademarks of semiconductor components industries, llc. literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada .com .com .com 4 .com u datasheet
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